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Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres

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3 Author(s)
Yang, Chih-Cheng ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan ; Chen, San-Yuan ; Lee, Hsin‐Yi

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High-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnO/Si substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c-axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N2-atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 6 )