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Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:23
,
Issue:
6
)
Date of Publication: Nov 2005
- Page(s):
- 2288 - 2291
- ISSN :
- 1071-1023
- Digital Object Identifier :
- 10.1116/1.2101599
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 2005
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