By Topic

Compatibility of high pressure cleaning mixtures with a porous low dielectric constant film: A positronium annihilation lifetime spectroscopic study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Myneni, Satyanarayana ; Georgia Institute of Technology, School of Chemical and Biological Engineering, Atlanta, Georgia 30332-0100 ; Peng, Hua-Gen ; Gidley, D.W. ; Hess, D.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1941227 

High pressure CO2 based cleaning mixtures have recently been proposed as an environmentally benign approach for postplasma etch residue removal. These mixtures must remove etch residues without damaging the low-k dielectric film that will be used to isolate interconnect structures in future generation devices. In this work, the compatibility of a CO2-based mixture with a porous low-k film is evaluated. Positronium annihilation lifetime spectroscopy (PALS) is used to monitor the change in pore size and film chemistry in a porous methyl silsesquioxane film after treatments under several different elevated pressure conditions. Spectroscopic ellipsometry and infrared spectroscopy are used to complement the PALS technique in order to better understand cleaning mixture effects on the dielectric film. CO2TMAHCO3–methanol mixtures cause negligible changes in pore dimensions and bulk composition of the film. The high pressure treatments cause a small decrease in positronium formation which may be attributed to contamination in the high pressure system.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )