Cart (Loading....) | Create Account
Close category search window

Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Johnson, S. ; Rafter Research Centre, Institute of Geological and Nuclear Sciences, P.O. Box 31-312, 30 Gracefield Road, Lower Hutt, New Zealand ; Markwitz, A. ; Rudolphi, M. ; Baumann, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This paper discusses the suppression of self-assembled silicon nanostructure growth through high fluence ion implantation. The nanofabrication procedure involves annealing of untreated Si(100) substrates at 1100 °C for 15 s using a raster scanned 20 keV electron beam. Nanostructuring occurs as a result of kinetic amplification of the surface disorder induced by thermal decomposition of the native oxide. Radiation induced disorder of the Si substrate prior to annealing by ion-implantation modifies the potential energy surface and thus the growth of self-assembled nanostructures. Highly disordered Si(100) surfaces produced by high fluence implantation with nitrogen and silicon ions are shown to completely suppress nanostructure growth. Exploiting this phenomenon we have demonstrated selective area nanostructure growth in microscale regions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.