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Scanning capacitance force microscopy imaging of metal-oxide-semiconductor field effect transistors

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5 Author(s)
Kimura, Kenjiro ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan ; Kobayashi, Kei ; Yamada, Hirofumi ; Matsushige, Kazumi
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We investigated two-dimensional carrier profiles in metal-oxide-semiconductor field effect transistors (MOSFETs) using scanning capacitance force microscopy (SCFM), which was based on electrostatic force detection. We successfully obtained clear contrasts on source, drain, and channel regions by contact-mode SCFM, which corresponded to their dopant concentrations. Furthermore, the contrast on the channel region was changed by applying dc offset voltage to the gate electrode. We also compared line profile obtained from the SCFM image with a dopant profile measured by secondary ion mass spectroscopy (SIMS).

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

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