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We investigated two-dimensional carrier profiles in metal-oxide-semiconductor field effect transistors (MOSFETs) using scanning capacitance force microscopy (SCFM), which was based on electrostatic force detection. We successfully obtained clear contrasts on source, drain, and channel regions by contact-mode SCFM, which corresponded to their dopant concentrations. Furthermore, the contrast on the channel region was changed by applying dc offset voltage to the gate electrode. We also compared line profile obtained from the SCFM image with a dopant profile measured by secondary ion mass spectroscopy (SIMS).