Cart (Loading....) | Create Account
Close category search window
 

Scanning capacitance force microscopy imaging of metal-oxide-semiconductor field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kimura, Kenjiro ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan ; Kobayashi, Kei ; Yamada, Hirofumi ; Matsushige, Kazumi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1941188 

We investigated two-dimensional carrier profiles in metal-oxide-semiconductor field effect transistors (MOSFETs) using scanning capacitance force microscopy (SCFM), which was based on electrostatic force detection. We successfully obtained clear contrasts on source, drain, and channel regions by contact-mode SCFM, which corresponded to their dopant concentrations. Furthermore, the contrast on the channel region was changed by applying dc offset voltage to the gate electrode. We also compared line profile obtained from the SCFM image with a dopant profile measured by secondary ion mass spectroscopy (SIMS).

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.