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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:23 Issue:4 Help

Electrical transport properties of ultrathin metallic films

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3 Author(s)
Tay, Maureen ; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 and Spintronics, Media and Interface Division, Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 ; Kebin Li ; Wu, Yihong

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1935527 

Ultrathin metal films of Al, Au, Cr, Cu, Ru, Ta, Co90Fe10, Ni81Fe19, Ir20Mn80 with or without capping layers have been prepared using ultrahigh vacuum sputtering and their morphological and electrical properties have been studied using atomic force microscopy and four-point probe measurement, respectively. It was found that the capping layer could either enhance or reduce the conductivity, depending on the capping layer thickness and surface roughness of the underlying film. The study of magnetoresistance (MR) dependence on capping and free layer thickness is also carried out on a pseudo spin valve.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication: Jul 2005

Page(s):
1412 - 1416
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.1935527
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2005

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