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Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition

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3 Author(s)
Furuya, A. ; Research Department 2, Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan ; Tsuda, H. ; Ogawa, S.

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Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed. A 2 nm thick ALD Ta(N) film, deposited by exposing a substrate to pentakisdimethylaminotantalum (Ta(N(CH3)2)5) and He/H2 plasma in turn, demonstrated strong adhesion comparable to that of a conventional physical vapor deposition Ta/TaN barrier. Both the via yield and the robustness against stress-induced voiding of single-damascene Cu/porous-low-k interconnects were improved by substituting an ALD Ta(N) adhesion layer for the conventional ALD TaN layer.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )