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Imaging patterns of intensity in topographically directed photolithography

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6 Author(s)
Paul, Kateri E. ; Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138 ; Breen, Tricia L. ; Hadzik, Tanja ; Whitesides, George M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1924415 

This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated (λ=365–436 nm) photoresist yields structures as small as 70 nm. Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )

Date of Publication:

May 2005

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