Cart (Loading....) | Create Account
Close category search window

Mass spectrometry studies of resist trimming processes in HBr/O2 and Cl2/O2 chemistries

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Pargon, E. ; LTM/CNRS, (CEA-LETI), 17 rue des martyrs, 38054 Grenoble cedex 09, France ; Joubert, O. ; Chevolleau, T. ; Cunge, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In a previous article, a parametric study of HBr/O2 and Cl2/O2 resist trimming processes correlated to x-ray photoelectron spectroscopy (XPS) analyses has been performed. The present article confirms the preliminary results obtained by XPS. Mass spectrometry experiments have established that the slow resist erosion rate measured in Cl2/O2 trim chemistries is attributed to a competitive etching of the resist by atomic chlorine and oxygen, while in HBr/O2 trim chemistries, atomic oxygen is the main etching species, bromine playing only a minor role. The etching of the resist by the oxygen species originating from the dissociation of HBr/O2 and Cl2/O2 plasmas generates the formation of volatile resist-etch-by-products such as CO and CO2, while the etching of the resist by halogen (bromine or chlorine) generates less volatile and heavier resist-etch-by-products such as CxHyBrz with bromine and CxHyClz with chlorine. Mass spectrometry has also shown that plasma conditions leading to a higher concentration of halogen-resist-etch-by-products in the plasma gas phase are also the conditions inducing the lower trim rates. This confirms the assumption that the deposition of heavy resist-etch-by-products on the resist sidewalls controls the trim rates.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.