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Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

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7 Author(s)
Kluth, S.M. ; Institut für Schichten und Grenzflächen, Forschungszentrum Jülich, D-52425 Jülich, Germany, and Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200, Australia ; Alvarez, D. ; Trellenkamp, St. ; Moers, J.
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B implants of 1 keV, 1×1015 at. cm-2 into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 1 )