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Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures

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3 Author(s)
Douheret, O. ; Department of Microelectronics and Information Technology, Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology, Electrum 229, S-164-40 Kista, Sweden ; Bonsels, S. ; Anand, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1835317 

In this work, a procedure to determine the spatial resolution in scanning capacitance (SCM) and scanning spreading resistance microscopy (SSRM) is proposed and demonstrated. It is based on profiling of confined carriers (in cross section) in quantum well (QW) structures consisting of QWs with different well widths and interwell spacing. Spatial resolution of sub-5 nm was observed for SSRM with commercially available diamond-coated silicon probes and sub-30 nm for SCM with IrPt5-coated probes. The influence of experimental parameters such as tip–sample bias and tip averaging on lateral resolution is discussed and appropriate measurement conditions for performing high-resolution measurements are highlighted. Finally, it is proposed that such structures can be used not only to select probes appropriate for high resolution measurements, but also in the development of new probes.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan 2005

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