IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:22 Issue:3 Help

Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Wu, Ming-Yuan ; Research Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China ; Lei, Po-Hsun ; Tsai, Chia-Lung ; Yang, Chi-Da
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1715086 

In this article, we report on the growth of 1.3-μm-compressive-strain GaInAsP/InP multiple-quantum-well laser diodes (CS-MQW LDs) with a tensile-strain GaInP quantum barrier (GaInP-QB) in the separate-confinement-heterostructure (SCH) regions. Observed via the photoluminescence (PL) spectra, the optimum Ga composition of GaxIn1-xP-QB, GaInP-QB thickness, and pair number of the GaxIn1-xP-QB are 0.09, 5 nm thick and one pair, respectively. The optimum GaInP-QB structure in the p-side SCH region exhibits the narrowest PL full width at half maximum of 43.1 meV, the lowest threshold current of 23 mA, and the highest characteristic temperature of 52 K for the as-cleaved LDs with a 600-μm-cavity length and a 3.5-μm-wide ridge stripe. This low threshold current is better than that of the LDs with GaInP-QB in the n-side SCH region and that of the conventional LDs without GaInP-QB. © 2004 American Vacuum Society.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )

Date of Publication: May 2004

Page(s):
961 - 965
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.1715086
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2004

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.