By Topic

Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Srinivasan, K. ; Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 ; Barclay, P.E. ; Painter, O. ; Chen, Jianxin
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1701848 

In recent work [K. Srinivasan, P. E. Barclay, O. Painter, J. Chen, A. Y. Cho, and C. Gmachl, Appl. Phys. Lett. 83, 1915 (2003)] resonant mode linewidths of 0.10 nm (corresponding to a quality factor ∼1.3×104) were measured in a photonic crystal defect microcavity fabricated in an InAsP/InGaAsP multi-quantum-well membrane. The quality of device fabrication is of critical importance in the performance of these devices. Here, we present the results of key processing steps, including inductively coupled plasma reactive ion etching of a SiO2 mask and the InAsP/InGaAsP membrane, and a selective undercut wet etch of an underlying sacrificial InP layer to create the freestanding membrane. The importance of etching through the membrane layer deeply into the sacrificial InP layer is highlighted, and discussed in the context of the crystallographic nature of the undercut wet etch process. The results of device processing are compared with previous work done using a chemically assisted ion-beam etch, and a discussion of the benefits of the current approach is given. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )