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Influence of preamorphization and recrystallization on indium doping profiles in silicon

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11 Author(s)
Duffy, R. ; Philips Research Leuven, Kapeldreef 75, 3001 Leuven, Belgium ; Venezia, V.C. ; Heringa, A. ; Pawlak, B.J.
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The effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. During recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. We establish that the physical mechanism for this phenomenon in the 1018–1019cm-3 concentration range is segregation determined, as there is no significant concentration dependence for those doses studied in this work. We also demonstrate that this phenomenon is enhanced at lower temperatures. © 2004 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )