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Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics

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5 Author(s)
Young-Bae Kim ; Department of Ceramic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea ; Kang, Moon-Soo ; Taeho Lee ; Ahn, Jinho
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Hafnium–oxide films deposited on a thermally grown SiON film and a hydrogen-terminated Si bare substrate by an atomic-layer-deposition technique have been investigated. Capacitance–voltage measurements show equivalent-oxide thicknesses of about 1.79 nm for a 4.2 nm HfO2/SiON stack capacitor and of about 1.84 nm for a 5.2 nm HfO2 single-layer capacitor. These measurements also show a dielectric constant of 18.1 for the HfO2 in the stack capacitor and of 11.2 for the HfO2 single-layer capacitor. The hysteresis of the stack capacitors is measured to be less than 40 mV, whereas that of the single-layer capacitor is 206 mV. Transmission-electron microscopy (TEM) and x-ray photoelectron spectroscopy indicated that the dielectric films are amorphous structure, rather than crystalline or phase-separated silicide and oxide structures. TEM showed that the interface of the stack capacitor can be stable to at least 850 °C. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 5 )

Date of Publication:

Sep 2003

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