We studied the effects of Ge preamorphization (PAM) and Ti deposition method on 0.25 μm Ti-salicide junctions in comparison with As PAM. For each PAM scheme, ion implantations are performed at 2E14 ion/cm2 dose and 20 keV energy using 75As and GeF4 ion sources. Ionized physical vapor deposition and collimated type dc-magnetron sputtering are used for depositing ∼300 Å Ti for this study. Ge PAM showed lower sheet resistance (∼48 Ω /sq.) and better within-wafer uniformity than As PAM at 0.25 μm line width of n+/p-well junctions. This is attributed to enhanced C54-silicidation at n+ junction. At p+ junctions, comparable performance in sheet-resistance reduction at fines lines for both As and Ge PAM schemes. Junction leakage current (JLC) levels are below ∼1E14 A/μm2 at area patterns for all process conditions, whereas no degradation in JLC are shown under Ge PAM condition even at edge-intensive patterns. Junction breakdown voltage and contact resistances are satisfactory at all process conditions. © 2001 American Vacuum Society.