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Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry

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9 Author(s)
Jiang, Z.-X. ; Digital DNA Laboratories, Motorola Incorporated, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 ; Backer, S. ; Lee, J.J. ; Wu, L.Y.
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Secondary ion mass spectrometry analysis of through-oxide ion implantation in silicon often exhibits strong matrix effects across the SiO2/Si interface. In this study we explored the analytical conditions that required minimal correction for the variation in the relative sensitivity factors and the sputtering rates across the interface. We found that an O2+ beam at 1 keV and 46° provided an equal sputtering erosion rate for SiO2 and Si. Under these sputtering conditions, the SiO2 surface remained smooth, but Si became rough ∼50 nm below the SiO2/Si interface. A complete depth profile of B implantation through oxide was obtained by utilizing the 1 keV 46° O2+ beam in SiO2 and across the SiO2/Si interface and a 1 keV 60° O2+ beam deeper in the Si substrate. The data exhibited an apparent drop in the concentration of the implanted B at the SiO2/Si interface which was attributed to a phase transition in the matrix from amorphous to crystalline. In addition, analyses of an ion-beam synthesized oxide (5 keV O2+ at normal incidence) confirmed the occurrence of outdiffusion of B in the altered layer. Also, the results indicated preferential sputtering of B at the surface. © 2001 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 4 )