By Topic

Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ramalingam, Shyam ; Department of Chemical Engineering, University of California, Santa Barbara, Santa Barbara, California 93106-5080 ; Aydil, Eray S. ; Maroudas, Dimitrios

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1362682 

An atomic-scale analysis based on molecular dynamics simulations of the interactions of small thermal and energetic SinHm, n≫1, clusters observed in various plasmas with crystalline and amorphous Si surfaces is presented. The experimental literature has assumed and employed a unit reaction probability for clusters of various sizes on all Si surfaces in phenomenological models for obtaining hydrogenated amorphous Si film growth rates, while the reaction mechanisms of clusters with the deposition surfaces have remained unexplored. In addition, it is widely speculated that clusters have a detrimental effect on the film quality. Our study shows that the clusters react with high (≫85%) probability with crystalline surfaces and with surfaces of amorphous Si films. The structure and energetics of the corresponding adsorbed cluster configurations on these surfaces are analyzed and discussed. Furthermore, the simulations provide insight into possible mechanisms for the formation of defects, such as voids and dangling bonds, in plasma-deposited amorphous Si films through reactions of the clusters with the deposition surfaces. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 3 )