By Topic

Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Haberer, E.D. ; Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 ; Chen, C.‐H. ; Hansen, M. ; Keller, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1362684 

Although GaN is a chemically inert, thermally stable material, it has demonstrated sensitivity to ion damage generated by dry etch processes such as reacting ion etching and inductively coupled plasma etching. Recombination-enhanced diffusion is an important mechanism which has been observed in other III–V semiconductor systems. In this study we examine the possibility of enhanced diffusion in GaN using quantum well (QW) probe structures. The deeper QWs (750 and 1000 Å deep) showed a steady decrease in relative photoluminescence (PL) intensity with time, providing evidence of the cooperative effects of channeling and defect diffusion in deep etch damage propagation in GaN. In contrast, shallow QWs (150 and 250 Å from the surface) showed a slight decrease followed by a gradual increase in relative PL intensity with time which was explained by defect annihilation. Exposure to above band gap illumination, used to simulate and enhance carrier generation during etch, appears to speed defect annihilation in high defect concentration regions resulting in an increase in QW luminescence, where as in lower defect concentration areas, above band gap illumination does not appear to significantly alter QW luminescence. We attribute this difference in behavior to a difference in diffusion constant. The diffusion constant in less damaged regions may be much lower than that of the highly damaged material. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 3 )