A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission electron microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/μm. When the films were etched in an HF:NH4F solution for 10 min, the threshold field decreased to 2.6 V/μm. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed. © 2000 American Vacuum Society.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:18
,
Issue:
6
)
Date of Publication:
Nov 2000
- Page(s):
-
2698
-
2703
- ISSN :
-
1071-1023
- Digital Object Identifier :
-
10.1116/1.1322043
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Nov 2000