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Field emission properties of nanocomposite carbon nitride films

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5 Author(s)
Alexandrou, I. ; Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom ; Baxendale, M. ; Rupesinghe, N.L. ; Amaratunga, G.A.J.
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A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission electron microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/μm. When the films were etched in an HF:NH4F solution for 10 min, the threshold field decreased to 2.6 V/μm. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 6 )