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X-ray source combined ultrahigh-vacuum scanning tunneling microscopy for elemental analysis

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5 Author(s)
Hasegawa, Y. ; Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan ; Tsuji, K. ; Nakayama, K. ; Wagatsuma, K.
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An ultrahigh-vacuum scanning tunneling microscope (UHV-STM) combined with an x-ray source has been developed. STM samples were irradiated with an x-ray beam and an x-ray induced photoemission current was detected with the tip. By using the system, apparent height increases due to the x-ray induced current were successfully observed in STM images of Cr/Cu(111), Au/Cu(111), Si(111)7×7, and Si(111)-5×1 Au surfaces. A bias voltage applied to the tip enhances collection of the x-ray induced current and increases the apparent height. The relative height increase of the Au overlayer to the Cu substrate in the STM images of the Au/Cu(111) surface was found to depend on the x-ray irradiation, suggesting that it may be a promising tool for elemental analysis in a STM. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 6 )

Date of Publication:

Nov 2000

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