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An ultrahigh-vacuum scanning tunneling microscope (UHV-STM) combined with an x-ray source has been developed. STM samples were irradiated with an x-ray beam and an x-ray induced photoemission current was detected with the tip. By using the system, apparent height increases due to the x-ray induced current were successfully observed in STM images of Cr/Cu(111), Au/Cu(111), Si(111)7×7, and Si(111)-5×1 Au surfaces. A bias voltage applied to the tip enhances collection of the x-ray induced current and increases the apparent height. The relative height increase of the Au overlayer to the Cu substrate in the STM images of the Au/Cu(111) surface was found to depend on the x-ray irradiation, suggesting that it may be a promising tool for elemental analysis in a STM. © 2000 American Vacuum Society.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:18
,
Issue:
6
)
Date of Publication: Nov 2000
- Page(s):
- 2676 - 2680
- ISSN :
- 1071-1023
- Digital Object Identifier :
- 10.1116/1.1318189
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 2000
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