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Study of current leakage in InAs p–i–n photodetectors

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3 Author(s)
Lin, Ray-Ming ; Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China ; Tang, Shiang-Feng ; Kuan, C.H.

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The current leakages of InAs photodiodes have been systematically studied by adding undoped layers having thicknesses of 0, 0.30, and 0.72 μm between the p–n junction. At reverse bias V=-0.5 V, the dark currents of the InAs p–i–n diodes with undoped layer thicknesses of 0, 0.30, and 0.72 μm are about 5×10-6, 7×10-8, and 1×10-10 A, respectively, at 77 K. The leakage current of the InAs p–n diode was successfully reduced by adding 0.72-μm-thick undoped layer between the p–n junction. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 6 )