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Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer

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7 Author(s)
Mao, D.S. ; Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China ; Wang, X. ; Li, W. ; Liu, X.H.
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A 200-nm-thick diamond-like carbon film was prepared on Ti-deposited Si (ρ≪0.01 Ω cm) using a filtered arc deposition technique. Field-emission properties of it are enhanced as compared to films deposited on Si, showing an increased current and emission site density (∼1.2×103/cm2). A patterned diamond-like carbon flat thin film on Ti-deposited Si fabricated by the oxygen reactive ion-beam etching technique shows further enhanced field-emission properties. An emission site density of 3×103/cm2 was obtained. Field emission could be observed at a field value as low as 2.1 Vm. It is shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion-beam etching are possible causes for the enhanced effects. It can also be explained by the Geis’ metal–diamond–vacuum triple junction emission mechanism. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 5 )