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Atomic scale Pb chains on Si(100)

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5 Author(s)
Dong, Zhen-Chao ; National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan ; Fujita, Daisuke ; Yakabe, Taro ; Sheng, Hanyi
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The growth of Pb on Si(100) 2×1 is found by scanning tunneling microscopy to form one-dimensional ad-dimer chains at a coverage far below a monolayer, analogous to the behavior of group-III elements (Ga, Al, In) on the same surface but with a buckled dimer configuration. The asymmetric dimerized structure is retained for c(8×4) and c(4×4) reconstructions of higher coverage. Tunneling spectra for the Pb dimers exhibit a surface-state band gap of ∼1.2 eV and thus suggest a nonmetallic property for the Pb chains, in agreement with the dimerization and buckling feature of Pb atoms. The parallel ad-dimer adsorption structure also suggests an approach to obtaining long atomic lines via the selection of the single domain Si(100) as substrates. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 5 )

Date of Publication:

Sep 2000

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