By Topic

Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jiang, Z.-X. ; Delft Institute of MicroElectronics and Submicron Technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The NetherlandsInstitute of MicroElectronics, 11 Science Park Road, Singapore 117685 ; Alkemade, P.F.A. ; Tung, C.H. ; Wang, J.L.F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.591263 

The apparent depths of B and Ge deltas in Si were measured with secondary ion mass spectrometry using 1–4 keV O2+ beams at oblique incidence (40°–80° with respect to the surface normal). The real depths of the Ge deltas were obtained via calibration against transmission electron microscopy (TEM). The measured centroids of the Ge delta peaks were 0.5±0.4 nm shallower than the real (TEM) depths, independent of angle and energy. For B there was a clear angular dependency of the centroid position, but the energy dependency was virtually absent (viz., differential shift ≪0.2 nm/keV/ion). Repeated analyses during a 2.5 year period showed a reproducibility in Ge delta peak position of 0.04 nm. Surprisingly, the slow but continuous growth of the native surface oxide had no effect on the apparent Ge delta depths. The profile shift of B towards the surface was attributed to the high sputter rate during the surface transient and to B outdiffusion under oxygen bombardment. It was concluded that decreasing the beam energy did not reduce the B shift; the positive effect of a thinner surface transient layer was nullified by a larger (equilibrium) oxygen concentration. In contrast, indiffusion of Ge compensated at all energies and angles the (apparent) Ge shift due to the transient high sputter rate. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 2 )