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We have developed the spin-on Cu metal (SOM) process to fill trenches and vias down to 0.3 μm. SOM is a liquid material that contains an organic solvent and dispersed ultrafine particles as a source of Cu. This solution was applied to a Si wafer using a spin coater to form a film. Coated wafers were baked at 623–673 K for 10 min in a reducing atmosphere. The end result is a Cu film. Contrary to the conventional deposition techniques, the SOM process is simple but advantageous to its gap filling, planarization, and cost consideration. © 1999 American Vacuum Society.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:17
,
Issue:
5
)
Date of Publication: Sep 1999
- Page(s):
- 2321 - 2324
- ISSN :
- 1071-1023
- Digital Object Identifier :
- 10.1116/1.590911
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 1999
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