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Improvement of properties of dynamic random access memories capacitors by PH3 plasma doping process after the formation of hemispherical-grained silicon

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7 Author(s)
Moon, H.S. ; Jusung Engineering, 49, Neungpyeong-Ri, Kwangju-Gun, Kyunggi-Do 464-890, Korea ; Choi, H.S. ; Jang, H.G. ; Hwang, C.J.
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A novel technology PH3 plasma doping process” is used to improve the reduction of Cmin/Cmax ratio due to the depletion layer generation on the surface of storage electrode. The storage electrode with hemispherical-grained silicon (HSG–Si) made from amorphous silicon (a-Si) with low concentration of phosphorus has no bald defect but low Cmin/Cmax ratio. In PH3 plasma doping process, phosphorus diffuses in Si by interacting with vacancies. Using the storage electrode with HSG–Si doped in PH3 plasma, the capacitor has 96% of Cmin/Cmax ratio and no degradation of capacitor properties caused by excess phosphorus incorporation into dielectrics. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1999

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