Cart (Loading....) | Create Account
Close category search window

Improvement of properties of dynamic random access memories capacitors by PH3 plasma doping process after the formation of hemispherical-grained silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Moon, H.S. ; Jusung Engineering, 49, Neungpyeong-Ri, Kwangju-Gun, Kyunggi-Do 464-890, Korea ; Choi, H.S. ; Jang, H.G. ; Hwang, C.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A novel technology PH3 plasma doping process” is used to improve the reduction of Cmin/Cmax ratio due to the depletion layer generation on the surface of storage electrode. The storage electrode with hemispherical-grained silicon (HSG–Si) made from amorphous silicon (a-Si) with low concentration of phosphorus has no bald defect but low Cmin/Cmax ratio. In PH3 plasma doping process, phosphorus diffuses in Si by interacting with vacancies. Using the storage electrode with HSG–Si doped in PH3 plasma, the capacitor has 96% of Cmin/Cmax ratio and no degradation of capacitor properties caused by excess phosphorus incorporation into dielectrics. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.