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Microstructure characterization of oxidized nanocrystalline Si:H film by transmission electron microscopy

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5 Author(s)
Hai Lu ; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China ; Liu, Jianhong ; Li, Wei ; Chen, Kunji
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Oxidized nanocrystalline (nc) Si:H film has been produced by plasma enhanced chemical vapor deposition with a high hydrogen diluted silane and followed by thermal oxidization in a conventional furnace at a relatively low temperature of 800 °C. The resulting films were studied using cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It is found that nc-Si dots embedded in an a-SiO2 matrix can be formed by the above method and some of them exhibit the columnar growth morphology. Both the nc-Si:H deposition and the later thermal treatment are revealed to contribute to the film microstructures. It is further suggested that by choosing optimum oxidation time, the size of Si nanoparticles can be well controlled. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1999

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