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Nanometer-scale Si-selective epitaxial growth using an ultrathin SiO2 mask

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3 Author(s)
Miyata, Noriyuki ; Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba, Ibaraki 305-0046, Japan ; Watanabe, H. ; Ichikawa, Masakazu

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Si-selective epitaxial growth (Si-SEG) with Si2H6 gas is performed on clean Si(001)-2×1 open linear windows in an ultrathin SiO2 mask formed by electron-beam-induced selective thermal decomposition (EB-STD) to fabricate a Si nanowire. We demonstrate that Si-SEG is possible in a 15-nm-wide Si(001)-2×1 open linear window formed by EB-STD. However, the width of the Si wire increases with Si growth, because the oxide mask decomposes thermally at the oxide/Si(001)2×1 boundary. An ultrathin oxide layer grown at higher temperature is effective to suppress the widening of the Si wire, even if the oxide thickness is not changed. © 1999 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )