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Fabrication of tungsten-coated silicon-based gated emitters

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2 Author(s)
Chen, L. ; Department of Electronics, University of York, Heslington, York YO1O 5DD, United Kingdom ; El-Gomati, M.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590609 

The present work reports on the fabrication of tungsten-coated silicon-based gated emitters. The main fabrication procedures include: forming silicon tips by way of reactive ion etching without thermal oxidation sharpening, tungsten coating and dielectric layer coating though plasma-enhanced chemical vapor deposition, metal layer coating by evaporation, and gate aperture opening by wet chemical etching processes. Scanning electron microscopy in combination with energy dispersive x-ray analysis were employed to study the emitters during the fabrication. The radii of the tungsten-coated tips were about 30 nm. The gated emitters have a volcano shape with gate aperture diameter of less than 3 μm and a silicon dioxide insulating layer 1 μm thick. The gated field emitters exhibited a low turn-on voltage of about 60 V. Emission current above 15 μA from a single emitter was observed. Fowler–Nordheim plots of the emitted current from these emitters confirmed the field emission behavior. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 2 )

Date of Publication:

Mar 1999

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