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Damage-free cleaning of Si(001) using glancing-angle ion bombardment

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3 Author(s)
Labanda, Jose Gregorio C. ; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 ; Barnett, Scott A. ; Hultman, L.

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The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts=730 °C, impingement angle Φ=3–15° relative to the surface plane, ion energy E=1 keV and dose D=3×1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value 0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts=730 °C showed etch pits with a density of 106–107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E=1 keV, D=3×1015 ions cm-2 and Φ=3°, followed by a 730 °C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density ≪4×104 cm-2. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )