By Topic

Damage-free cleaning of Si(001) using glancing-angle ion bombardment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Labanda, Jose Gregorio C. ; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 ; Barnett, Scott A. ; Hultman, L.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effects of glancing-angle argon ion bombardment on air-contaminated Si(001) surfaces were studied. Bombarding at substrate temperature Ts=730 °C, impingement angle Φ=3–15° relative to the surface plane, ion energy E=1 keV and dose D=3×1015 ions cm-2 gave high-quality reflection high energy electron diffraction (RHEED) patterns and contaminant-free surfaces as observed by ion scattering spectroscopy. Atomic force microscopy images showed roughness value 0.5 nm under these conditions, but the roughness increased and RHEED patterns became spotty for higher doses or energies. Secco etching of samples bombarded at Ts=730 °C showed etch pits with a density of 106–107 cm-2 that increased with increasing D and E. Room-temperature bombardment with E=1 keV, D=3×1015 ions cm-2 and Φ=3°, followed by a 730 °C anneal, yielded a lowest roughness value of 0.2 nm. Secco etching showed no resolvable pits, indicating a dislocation density ≪4×104 cm-2. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )