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Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates

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5 Author(s)
Wildt, D. ; Laboratorio de Microelectrónica, Departamento de Fı´sica Aplicada C-XII, Universidad Autónoma de Madrid, Cantoblanco 28049 Madrid, Spain ; Garc─▒ a, B.J. ; Castano, J.L. ; Piqueras, J.
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Phosphorus incorporation during chemical beam epitaxial (CBE) growth of GaAs1-xPx from triethylgallium, tertiarybutylarsine, and tertiarybutylphosphine is investigated. Reflection high-energy electron diffraction intensity oscillations are used to measure the phosphorus incorporation during the As-limited and the (As+P)-limited growth on a Ga-rich surface. The resulting phosphorus mole fraction is compared with the phosphorus composition measured by x-ray rocking curves on the strained GaAs1-xPx layers grown by conventional CBE with a simultaneous supply of group V and group III elements. The phosphorus incorporation rate during CBE growth is lower than that measured during the group V controlled growth but is still much higher than the incorporation rate reported for molecular beam epitaxy growth using elemental sources. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )