By Topic

Reduced 980 nm laser facet absorption by band gap shifted extended cavities

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Piva, P.G. ; Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada ; Goldberg, R.D. ; Mitchell, I.V. ; Fafard, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590230 

Reflectance modulation thermography has been used to determine facet temperatures of InGaAs/GaAs double quantum well (QW) GRINSCH ridge-waveguide lasers possessing band gap shifted extended cavities (BSECs). The incorporation of BSECs produced by mega-electron-volt ion-implantation enhanced QW intermixing, significantly decreased the laser facet temperatures and should result in increased device longevity prior to the onset of catastrophic mirror failure. Low energy implants in Al-free InGaAs/InGaAsP/InGaP laser structures exhibited large effective diffusivities of intermixing enhancing defects from the implant damage regions. This latter material system is particularly well suited for the implementation of BSECs as end of range damage from the implant can be kept spatially isolated from the optical mode regions. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )