Cart (Loading....) | Create Account
Close category search window

In situ temperature control of molecular beam epitaxy growth using band-edge thermometry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Johnson, Shane ; Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-6206 ; Kuo, Chau‐Hong ; Boonzaayer, Martin ; Braun, Wolfgang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Band-edge thermometry is becoming an established noncontact method for determining substrate temperature during molecular beam epitaxy. However, with this technique thin-film interference and/or absorption in the growing epilayer can cause shape distortions of the spectrum that may be interpreted erroneously as real temperature shifts of the substrate. An algorithm is presented that uses the width of the spectrum to correct for apparent temperature errors caused by interference and absorption in the epilayer. This correction procedure is tested on substrate temperature data taken during the growth of a λ=930 nm resonant cavity, where the apparent substrate temperature oscillates ±5 °C during the growth of the mirror stacks. These oscillations are reduced to ±3 °C using the correction algorithm. A recently developed model for the substrate temperature dynamics in molecular beam epitaxy shows that roughly ±1 °C of the remaining ±3 °C temperature oscillations are real. Band-edge thermometry is also used to control the substrate temperature to within ±2 °C during the growth of near-lattice-matched InGaAs on InP, whereas the same growth under constant thermocouple temperature would result in a 50 °C rise in the actual substrate temperature.© 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.