By Topic

Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Machida, K. ; NTT System Electronics Laboratories, Atsugi-shi, Kanagawa 243-01, Japan ; Kyuragi, H. ; Akiya, H. ; Imai, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590014 

Global planarization technology based on a new concept comprised of spin on glass (SOG) film transfer and hot pressing is proposed for interlayer dielectrics. The technology basically involves coating a SOG film onto a sheet film in advance and then transferring it from the sheet film to a Si substrate by pressing and heating it in a vacuum. Planarization and filling of the interlayer dielectrics can be carried out by this process. For this technology, perhydrosilazane, which has a high viscosity for a thick formation during coating and a low viscosity for the flow during heating, is used as the SOG material. Experimental results show that the SOG thickness is reduced by the pressing and heating process and that its uniformity can be improved by the press force. By applying this technology to Al interconnection, it is found that planarization and filling can be completely realized. Therefore, this technology is very promising for simple and inexpensive global planarization. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )