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Bromine ion-beam-assisted etching of InP and GaAs

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5 Author(s)
Rossler, J.M. ; Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, Massachusetts 01854 ; Royter, Y. ; Mull, D.E. ; Goodhue, W.D.
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Bromine ion-beam-assisted etching produces smooth vertical sidewalls in GaAs wafers with substrate temperatures in the range of 20–200 °C and smooth vertical sidewalls in InP wafers with substrate temperatures in the range of 150–200 °C. Etch rates can be varied from several nm/min to 0.16 μm/min through the bromine flow rate, Ar+ ion beam density and energy, and the substrate temperature. The etching rate ratios of bromine-only etching (no Ar+ ion beam) to argon ion-beam-assisted bromine etching to argon ion etching (no bromine) with an ion beam density of 40 μA/cm2 and ion beam energy of 500 V were measured to be 11.5:23:1 and 16:125:1 at a substrate temperature of 200 °C and 2:42:1 and 1:40:1 at a substrate temperature of 100 °C for GaAs and InP, respectively. Such rate enhancements were found to be typical with these materials. Bromine ion-beam-assisted etching also appears to have an advantage over chlorine ion-beam-assisted etching in that high anisotropy can be achieved with bromine in both the GaAs and the InP materials systems at substrate temperatures as high as 200 °C as compared to chlorine where the etching of GaAs is spontaneous and isotropic at temperatures above 150 °C. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

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