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Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch

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3 Author(s)
Kim, Jong-Hee ; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea ; Lim, Dae Ho ; Yang, Gye Mo

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Etching results using the solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For AlxGa1-xAs (x≪0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H2O2 solution. The turning volume ratio of the solution, at which etching starts, sensitively depends on Al composition. Additionally, the etch rate of AlyGa1-yAs (y≫0.7) quickly decreases with decreasing Al composition in de-ionized H2O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 2 )

Date of Publication:

Mar 1998

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