By Topic

Effect of rapid thermal annealing on the microstructure and electrical characteristics of Au/Ni/Au/Ge/Ni multilayers deposited on n-type InGaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Morais, J. ; IFGW-UNICAMP, Campinas, São Paulo 13081-970, Brazil ; Fazan, T.A. ; Landers, R. ; Pereira, R.G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effect of rapid thermal annealing on the microstructure and contact resistance of Au/Ni/Au/Ge/Ni multilayers deposited on InGaAs:Si layers was studied by Auger electron spectroscopy (AES) and the transmission line method. The reaction process at the interfaces after thermal annealing was monitored by Auger depth profiles (AES in conjunction with ion sputtering). We have observed that the formation of a NiGeAs layer at the interface plays an important role in obtaining contacts with low specific resistance, similar to GaAs. Based on these results, we have obtained extremely low specific contact resistance [(4±1)×10-8 Ω cm2] for annealing temperatures higher than 400 °C. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )