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Correlated electrical and optical measurements of firing semiconductor bridges

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3 Author(s)
Kim, Jongdae ; Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600, Korea ; Kim, Sang Gi ; Jungling, K.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589582 

Description is given of a high-resolved optical multichannel analyzer (OMA) system and of a firing set whereby OMA records and electrical measurements from a single discharge of a semiconductor bridge (SCB) may be accurately correlated in time. Such a correlation obtained by the novel experimental system is used in order to explain the dynamic discharge behaviors, especially the plasma formation, of the bridges. From the results of the experiments, the minimum electric field to generate a plasma from the W-land SCB is about 0.77×103V/cm and the time required to evolve the plasma from the bridge is about 1.5 μs, for the SCB 47 μm long and 140 μm wide. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )

Date of Publication:

Nov 1997

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