By Topic

Fourier transform infrared study of porous silicon dipped into Cr3+ solution

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Huang, Y.M. ; Materials Research Center, Nanyang Institute of Science and Technology, Nanyang 473066, Henan, People’s Republic of China ; Zhai, B.G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have measured Fourier transform infrared (FTIR) spectra of Cr3+ immersed porous silicon after annealing at different temperatures. After dipping porous silicon into Cr3+ solution, three additional peaks appear at 807, 886, and 940 cm-1 in the FTIR spectrum. When annealed in nitrogen at different temperatures for various durations, the peak at 807 cm-1 remains almost unchanged, the height of peak 886 cm-1 decreases gradually, while the peak at 940 cm-1 disappears quickly. This decay process occurs much faster at higher annealing temperature. These FTIR features reflect the surface chemistry change after immersed into Cr3+ solution. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )