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In situ scanning force microscopy study of TiN layers in sulphuric acid

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3 Author(s)
Herranen, M. ; Department of Inorganic Chemistry, The Ångström Laboratory, Uppsala University, Box 538, S-751 21 Uppsala, Sweden ; Nordin, M. ; Carlsson, J.-O.

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Morphological changes of sputter-deposited TiN films in 0.1 M sulphuric acid have been followed in situ with scanning force microscopy at different potentials. Disappearance of small structures was observed with increasing potential up to 1.2 V. A further increase of potential above 1.5 V resulted in growth of larger grains. Two passivation peaks at about 0.6 and 1.2 V, respectively, were recorded for the TiN films. The passivating layers formed at these two passivation peaks were characterized by x-ray photoelectron spectroscopy. At the lower passivation peak, titanium suboxides or oxynitrides were detected, while TiO2 was formed at potentials above 1.2 V. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )

Date of Publication:

Nov 1997

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