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X-ray photoelectron spectroscopy study of GaAs(110) cleaved in alcoholic sulfide solutions

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3 Author(s)
Bessolov, Vasily N. ; A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021, Russia ; Konenkova, Elena V. ; Lebedev, Mikhail V.

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X-ray photoelectron spectroscopy has been used to study chemical bonds which appeared on the (110) surface of GaAs after cleavage of the crystal in solutions of sodium sulfide in different alcohols. It has been shown that after such treatment the sulfur atoms are almost exclusively bonded only to gallium atoms. This is conditioned by the electrostatic interaction of sulfur ions in the solution with the surface ions of the crystal lattice of the semiconductor. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 4 )

Date of Publication:

Jul 1997

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