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Electrical transport properties of silicon delta-doped Al0.30Ga0.70As samples showing suppression of the DX center features

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5 Author(s)
Correa F., J.A. ; Departamento de Fı´sica, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, 31161-970 Belo Horizonte, Minas Gerais, Brazil ; de Oliveira, A.G. ; da Silva, M.I.N. ; Ribeiro, G.M.
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Photoconductivity and photo-Hall density measurements using an infrared light emitting diode as the light source were carried out on single silicon delta-doped Al0.30Ga0.70As samples as a function of temperature. The samples were grown by molecular beam epitaxy at 530 °C and 600 °C. We have studied the effect of etching the cap layer on the electrical transport properties. An observed persistent photoconductivity effect is explained using a model of parallel conduction in two nearby spatially separated channels. We will present evidence that the DX center is not active for nearly ideal delta-doped samples. We have proposed that the DX-center level related to the conduction-band minimum is strongly dependent on the silicon delta-doping density and on the growth conditions. © 1997 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 4 )