Cart (Loading....) | Create Account
Close category search window
 

Chemical vapor deposition of TiSi2 using an industrial integrated cluster tool

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Maury, D. ; France Telecom, CNET Grenoble, BP 98, F-38243 Meylan cedex, France ; Rostoll, M.L. ; Gayet, P. ; Regolini, J.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589238 

Selective chemical vapor deposition of TiSi2 for contacts and interconnects in 0.25 μm and below design rule devices has been performed from TiCl4/DCS/H2 chemistry using an industrial integrated cluster tool. Selectivity on oxide and nitride and a resistivity of around 16 μ cm have been obtained. The growth rates obtained on doped/undoped, poly/mono Si are almost identical. The grain size on poly Si is around 0.10 μm. Loading effect has been observed and corrected by the gas mixture. This chemical vapor deposition (CVD) technique has thus been used in a 0.25 μm complementary metal–oxide–semiconductor technology and the results are compared with the standard salicide (solid phase reaction) and elevated source/drain/gate (with selective epitaxy) followed by the salicide. The results show that CVD is a most promising process for the 0.2 μm technology with higher values for the transistor saturation current. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 1 )

Date of Publication:

Jan 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.