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Electronic structure of the nanoscale Al/SiO2/Si system

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2 Author(s)
Zavodinsky, V.G. ; Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio str, 690041 Vladivostok, Russia ; Kuyanov, I.A.

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Local-density approximation calculations have been used to study the electronic structure of the Al14/n-fold SiO2 ring/Si15 cluster system for n=3, 4, and 6. The sixfold ring placed between aluminum and silicon has an insulator character with the fundamental band gap of 4 eV and the energetic barrier of 3.5 eV. The fourfold ring has a band gap of 2 eV, however its insulator properties are doubtful because of the very small distance between the Fermi level and the first unoccupied state (0.2 eV). The threefold SiO2 ring has not a fundamental gap at all. Considering the Al14/n-fold SiO2 ring /Si1518 system as a model of the metal-oxide-semiconductor device, we can predict that the thin silica film (d≈7 Å) can be used as an insulator layer. However, if the thickness is less than 5 Å, the insulator properties of silica disappear. © 1997 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 1 )