By Topic

Electronic structure of the nanoscale Al/SiO2/Si system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zavodinsky, V.G. ; Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio str, 690041 Vladivostok, Russia ; Kuyanov, I.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589248 

Local-density approximation calculations have been used to study the electronic structure of the Al14/n-fold SiO2 ring/Si15 cluster system for n=3, 4, and 6. The sixfold ring placed between aluminum and silicon has an insulator character with the fundamental band gap of 4 eV and the energetic barrier of 3.5 eV. The fourfold ring has a band gap of 2 eV, however its insulator properties are doubtful because of the very small distance between the Fermi level and the first unoccupied state (0.2 eV). The threefold SiO2 ring has not a fundamental gap at all. Considering the Al14/n-fold SiO2 ring /Si1518 system as a model of the metal-oxide-semiconductor device, we can predict that the thin silica film (d≈7 Å) can be used as an insulator layer. However, if the thickness is less than 5 Å, the insulator properties of silica disappear. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 1 )