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Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization

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7 Author(s)
Ouellet, L. ; Mitel S.C.C., 18 Boulevard de l''Aéroport, Bromont (Québec) J0E 1L0, Canada ; Tremblay, Y. ; Gagnon, G. ; Caron, M.
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The use of an AlSiCu/TiN bilayer for the metallization of 1.0‐μm‐diam and 1.4‐μm‐deep straight wall contacts to 0.2‐μm‐deep n+ and p+ diffusions, results in a n+/p- and a p+/ṇ- junction leakage lower than 10 pA even after nine heat treatments (60 min each) at 450 °C. However, there is a very important degradation of the contact chain resistance statistics at small contact size. On the other hand, the use of a Ti/TiN bilayer barrier under the AlSiCu/TiN interconnect maintains a n+/p- and a p+/n- junction leakage lower than 20 pA and prevents the degradation of the contact chain resistance statistics after the nine heat treatments. It is finally demonstrated that a vent in nitrogen followed by a momentary air exposure of the Ti/TiN bilayer barrier results in larger contact resistance than a vent in nitrogen followed by a one hour long air exposure of the Ti/TiN bilayer barrier before the deposition of the AlSiCu/TiN interconnect. © 1996 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:14 ,  Issue: 6 )