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Electrical Properties of \hbox {Bi}_{5}\hbox {Nb}_{3} \hbox {O}_{15} Thin Film Grown on \hbox {TiN}/\hbox {SiO}_{2}/ \hbox {Si} at Room Temperature for Metal–Insulator–Metal Capacitors

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8 Author(s)
Kyung-Hoon Cho ; Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea ; Tae-Geun Seong ; Joo-Young Choi ; Jin-Seong Kim
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Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300°C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/¿m2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )

Date of Publication:

June 2009

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