Electrical Properties of Thin Film Grown on at Room Temperature for Metal–Insulator–Metal Capacitors

Buckling was observed in Bi₅Nb₃O₁₅ (BiNbO) films grown on TiN/SiO₂/Si at 300°C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/¿m² and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm² at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V² and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO₂/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.