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Resistivity of Graphene Nanoribbon Interconnects

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5 Author(s)
Murali, Raghunath ; Nanotechnol. Res. Center, Georgia Inst. of Technol., Atlanta, GA ; Brenner, Kevin ; Yinxiao Yang ; Beck, T.
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Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth(18 nm < W< 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )