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Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients

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5 Author(s)
D. M. Kim ; Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea ; Y. Jun ; Y. S. Sohn ; J. W. Kim
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The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995