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An improved simulation model for power MOSFET

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3 Author(s)
Baoxia Zhou ; Dept. of Autom. Eng., Xian Univ. of Technol., China ; Zhiming Chen ; Shoujue Wang

A new model is proposed to make a more precise simulation of a power MOSFET using PSPICE. The application results for all types of HEXFET devices have a good agreement with the corresponding curves in the IR databook. A method of parameter extraction and some simulation results are presented for a demonstration HEXFET device

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995